本文报道了基于Au/ZnO/Pt的高次谐波体声波谐振器（HBAR）在碳化硅衬底上的制造与表征，并将其微波特性与硅基底进行对比，以适用于微机电系统应用。采用电子回旋共振磁控溅射和电子束蒸发技术制备了高度c轴取向的ZnO薄膜和金属电极。通过X射线衍射、原子力显微镜和扫描电子显微镜对生长后的层的晶体结构和表面形貌进行了表征。碳化硅衬底上的HBAR可产生多达7 GHz的多个纵向体声波谐振，其中最强的谐振出现在5.25 GHz。使用一种新颖的Q值方法测得碳化硅衬底上HBAR的f·Q（谐振频率×品质因数）参数为4.1×10¹³ Hz，据我们所知，这是所有已报告的指定ZnO基器件中最高的。

This work reports on the fabrication and characterization of an Au/ZnO/Pt-based high-overtone bulk acoustic resonator (HBAR) on SiC substrates. We evaluate its microwave characteristics comparing with Si substrates for micro-electromechanical applications. Dielectric magnetron sputtering and an electron beam evaporator are employed to develop highly c-axis-oriented ZnO films and metal electrodes. The crystal structure and surface morphology of post-growth layers have been characterized using X-ray diffraction, atomic force microscopy, and scanning electron microscopy techniques. HBAR on SiC substrate results in multiple longitudinal bulk acoustic wave resonances up to 7 GHz, with the strongest excited resonances emerging at 5.25 GHz. The value of f.Q (Resonance frequency * Quality factor) parameter obtained using a novel Q approach method for HBAR on SiC substrate is 4.1 * 10^13 Hz, which to the best of our knowledge, is the highest among all reported values for specified ZnO-based devices.