光的独特特性，如高速度、低损耗传播、低串扰和低功耗，以及光子独特的量子属性，使其成为通信、高分辨率成像、光学计算及新兴量子信息技术的理想选择。然而，传统介质弱光学非线性的限制因素给通过超低强度光控制光带来了挑战。在本工作中，我们展示了利用硅中的电子雪崩过程实现的基于控制光束（单光子强度）的全光调制。所观察到的过程对应的非线性折射率$n_{2}$达到$1.3*10^{-2} m^2/W$，比已知的最佳非线性光学材料高出几个数量级。我们的方法为吉赫兹甚至更快速度的单光子级光学开关提供了可能性，这可能实现一系列在室温下运行的新型芯片上光子和量子设备。

The distinctive characteristics of light, such as high-speed and low-loss propagation, low cross-talk and low power consumption, along with photons unique quantum properties, make it most suitable for various applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor, though, is the weak optical nonlinearity of conventional media that poses challenges for the control of light with ultra-low intensities. In this work, we demonstrate all-optical modulation enabled by electron avalanche process in silicon, using a control beam with single-photon light intensities. The observed process corresponds to a record-high nonlinear refractive index of $n_{2}$~$1.3*10^{-2} m^2/W$, which is several orders of magnitude higher than the best known nonlinear optical materials. Our approach opens the possibility of gigahertz-speed, and potentially even faster, optical switching at the single-photon level, which could enable a family of novel on-chip photonic and quantum devices operating at room temperature.