高密度数据存储和自旋逻辑器件需要高效全电控自旋矩。迄今为止，通过自旋霍尔效应实现的电荷到自旋转换仅限于具有强自旋轨道耦合的d轨道材料，尤其是重金属。然而，具有强自旋轨道耦合的d轨道重金属会导致较短的自旋扩散长度，从而限制了自旋电子器件中的自旋传输和积累。因此，在d轨道材料中，电荷到自旋转换效率和自旋传输能力之间的矛盾无法调和。在此，我们报道了一种在p轨道In₂Bi合金中实验观测到的大规模电荷到自旋转换现象，该合金表现出与重金属Pt相当大的自旋霍尔角，并且具有较长的自旋扩散长度（为Pt的四倍）。第一性原理计算表明，费米能级附近拓扑对称性保护的带隙开启导致了大贝里曲率相关的自旋霍尔电导。由于p轨道的离域特性和In₂Bi的半金属特性，其自旋电流能够克服d轨道金属中自旋霍尔角和自旋扩散长度之间的物理障碍，从而推动高性能自旋电子器件的发展。

High density data storage and spin-logic devices require highly efficient all-electric control of spin moments. So far, charge-to-spin conversion through the spin Hall effect limits to d-orbital materials associated with strong spin-orbit coupling, especially heavy metals. However, d-orbital heavy metals with strong spin-orbit coupling results in a short spin diffusion length, which restricts the spin transport and accumulation in spintronic devices. Therefore, the conflict between charge-to-spin conversion efficiency and spin transport ability is irreconcilable in d-orbital materials. Here, we report a large charge to spin conversion experimentally observed in the p-orbital In2Bi alloy, exhibiting the coexistence of a large spin Hall angle comparable to heave metal Pt and a long spin diffusion length (4 times that of Pt). First-principles calculations reveal that topological symmetry-protected gap opening near the Fermi level results in large Berry curvature-related spin Hall conductivity. Due to the delocalized nature of p-orbitals and semimetal properties of In2Bi, its spin current can overcome the physical barriers between spin Hall angle and spin diffusion length in d-orbital metals, thereby advancing the development of high-performance spintronic devices.