半导体器件（尤其是金属氧化物半导体场效应晶体管，MOSFET）在功率电子学中至关重要，但其可靠性受到循环和温度影响的老化过程的影响。在分立半导体和功率模块中的主要老化机制是键合线脱落，这是由于热疲劳导致裂纹扩展引起的。这一过程通过指数增长并以突然失效为特征，使得长期老化预测具有挑战性。本研究对用于MOSFET失效预测的不同预测方法进行了全面的对比评估。经典追踪、统计预测以及基于神经网络（NN）的预测模型与新型时序融合变换器（TFTs）一同被实现。针对不同预测时间范围，对其MOSFET老化预测能力进行了综合比较。对于短期预测，所有算法均能产生可接受的结果，其中经典神经网络预测模型表现最佳，但计算成本较高。对于长期预测，仅TFT能够产生有效的结果，这得益于其整合未来预期条件协变量的能力。此外，TFT注意力点识别出关键的老化转折点，这些转折点表明了新的失效模式或加速老化阶段。

Semiconductor devices, especially MOSFETs (Metal-oxide-semiconductor field-effect transistor), are crucial in power electronics, but their reliability is affected by aging processes influenced by cycling and temperature. The primary aging mechanism in discrete semiconductors and power modules is the bond wire lift-off, caused by crack growth due to thermal fatigue. The process is empirically characterized by exponential growth and an abrupt end of life, making long-term aging forecasts challenging. This research presents a comprehensive comparative assessment of different forecasting methods for MOSFET failure forecasting applications. Classical tracking, statistical forecasting and Neural Network (NN) based forecasting models are implemented along with novel Temporal Fusion Transformers (TFTs). A comprehensive comparison is performed assessing their MOSFET ageing forecasting ability for different forecasting horizons. For short-term predictions, all algorithms result in acceptable results, with the best results produced by classical NN forecasting models at the expense of higher computations. For long-term forecasting, only the TFT is able to produce valid outcomes owing to the ability to integrate covariates from the expected future conditions. Additionally, TFT attention points identify key ageing turning points, which indicate new failure modes or accelerated ageing phases.