本文利用漫反射光谱（DRS）对多种功能性钙钛矿氧化物（V₂O₅、BaSnO₃、PbZr₀.₅₂Ti₀.₄₈O₃、BiMnO₃和BiFeO₃）中的电子跃迁及由缺陷引起的Urbach尾带进行了详细研究。我们通过Kubelka-Munk（KM）函数、Tauc图以及反射的一阶导数对DRS光谱进行分析，以进行对比研究。BiMnO₃表现出具有间接带隙能量的电子跃迁，Eg=0.92 eV。相比之下，其他功能性钙钛矿氧化物（块状V₂O₅、BaSnO₃、PbZr₀.₅₂Ti₀.₄₈O₃和BiFeO₃）均显示出直接带隙的本征跃迁，其Eg值分别为2.27、3.25、3.10和2.48 eV。这些直接带隙功能性氧化物中与诱导缺陷相关的估算Urbach能量（EU）值分别约为0.24、0.38、0.25和0.48 eV。此外，由于(Ba, Ca)掺杂引起的化学压力以及粒径减小，多铁性BiFeO₃的带隙能量有所降低。重要的是，从反射一阶导数分析和Tauc图方法得出的功能性钙钛矿氧化物材料的带隙和Urbach能量值与利用Kubelka-Munk函数理论推导出的值高度一致。基于此，我们提出了多铁性BiFeO₃的一种全面的电子能带结构，该材料对于光伏、光催化和光电铁电等光电子应用具有重要意义。

We conducted a detailed study of electronic transitions and defects induced Urbach tail bands in various functional perovskite oxides (V2O5, BaSnO3, PbZr0.52Ti0.48O3, BiMnO3, and BiFeO3) using diffuse reflectance spectroscopy (DRS). We analyzed their DRS spectra using the Kubelka-Munk (KM) function, the Tauc plot, and the first derivative of the reflectance for a comparative study. BiMnO3 exhibits an electronic transition with indirect band gap energy, Eg = 0.92 eV. In contrast, all other functional perovskite oxides, namely bulk V2O5, BaSnO3, PbZr0.52Ti0.48O3, and BiFeO3, show direct band gap interband transitions, with Eg values of 2.27, 3.25, 3.10, and 2.48 eV, respectively. The estimated Urbach energy (EU) values related to the induced defects in these direct band gap functional oxides are approximately 0.24, 0.38, 0.25, and 0.48 eV, respectively. Moreover, a reduction in the band gap energy of multiferroic BiFeO3 was observed due to induced chemical pressure from (Ba, Ca) doping and a decrease in particle size. Importantly, the evaluated band gap and Urbach energies of the functional perovskite oxide materials obtained from the analyses of the first derivative of reflectance and the Tauc plot method align remarkably well with the values deduced using the Kubelka-Munk function theory. Effectively, we propose a comprehensive electronic band structure for the multiferroic BiFeO3, an important material for optoelectronic applications such as photovoltaic, photocatalytic, and photoferroelectric devices.