多尺度建模通过将从头算计算的材料性质整合到设备尺度模型中，为优化半导体器件提供了有前景的方法。然而，一个关键挑战依然存在：尽管从头算方法能够给出特定迁移路径的扩散参数，但设备模型需要一组单一的有效参数来反映整体扩散行为。为弥合这一差距，我们提出了VacHopPy，这是一个开源的Python软件包，用于基于从头算分子动力学（AIMD）的空位跳跃分析。VacHopPy通过统计集成所有跳跃路径的热力学、动力学和几何贡献，提取出一组有效的空位跳跃参数：跳跃距离、跳跃势垒、有效路径数量、关联因子以及跳跃尝试频率。此外，它还提供追踪空位轨迹和检测AIMD模拟中相变的工具。VacHopPy在三种材料中的适用性得到了验证：面心立方Al、金红石TiO₂和单斜HfO₂。这些有效参数准确反映了温度依赖性的扩散行为，并与先前的实验观察结果高度一致。以简化形式表达适合设备模型的参数在跨越数百开尔文的宽广温度范围内仍然有效。此外，我们的研究强调了各向异性热振动在整体扩散中的关键作用，这一因素在其他框架中经常被忽略，但在VacHopPy中已得到内在考虑。总体而言，VacHopPy为原子尺度模型和设备尺度模型之间架起了桥梁，使得更可靠的多尺度模拟成为可能。

Multiscale modeling, which integrates material properties from ab initio calculations into device-scale models, is a promising approach for optimizing semiconductor devices. However, a key challenge remains: while ab initio methods yield diffusion parameters specific to individual migration paths, device models require a single set of effective parameters that capture overall diffusion. To bridge this gap, we present VacHopPy an open-source Python package for vacancy hopping analysis based on ab initio molecular dynamics (AIMD). VacHopPy extracts an effective set of parameters for vacancy hopping: hopping distance, hopping barrier, number of effective paths, correlation factor, and jump attempt frequency, by statistically integrating thermodynamic, kinetic, and geometric contributions across all hopping paths. It also offers tools for tracking vacancy trajectories and for detecting phase transitions in AIMD simulations. The applicability of VacHopPy is demonstrated in three materials: face-centered cubic Al, rutile TiO2, and monoclinic HfO2. The effective parameters accurately reflect temperature-dependent diffusion behavior and show good agreement with previous experimental observations. Expressed in a simplified form suitable for device models, these parameters remain valid across a broad temperature range spanning several hundred Kelvins. Furthermore, our findings highlight the critical role of anisotropic thermal vibrations in overall diffusion, a factor frequently overlooked in other frameworks but inherently considered in VacHopPy. Overall, VacHopPy provides a robust framework for bridging atomistic and device-scale models, enabling more reliable multiscale simulations.