本文提出了一种针对准零维量子态（0D-QS）如点缺陷、吸附原子和分子的全电学读出机制，该机制具有模块化和通用性，可扩展并与其他固态量子技术集成。我们的方法依赖于通过机械剥离和堆叠多层石墨烯（MLG）和六方氮化硼（hBN）形成高质量隧道结，将目标系统封装在MLG/hBN/0D-QS/hBN/MLG异质结构中。这种结构通过库仑阻塞和自旋阻塞的结合，实现了候选系统的全电子光谱分析和读出。作为原理证明，我们演示了hBN中的点缺陷以及分子量子比特钒酞菁（VOPc）的电子隧穿光谱。我们的方法展示了一种新的途径，可以将分子和原子缺陷整合到固态量子器件和电路中，并且其读出方案不依赖于高度受限的光学过程进行光子读出。

Here, we present an all-electrical readout mechanism for quasi-0D quantum states (0D-QS) such as point defects, adatoms and molecules, that is modular and general, providing an approach that is amenable to scaling and integration with other solid-state quantum technologies. Our approach relies on the crea-tion of high-quality tunnel junctions via the mechanical exfoliation and stacking of multi-layer gra-phene (MLG) and hexagonal boron nitride (hBN) to encapsulate the target system in an MLG/hBN/0D-QS/hBN/MLG heterostructure. This structure allows for all-electronic spectroscopy and readout of candidate systems through a combination of coulomb and spin-blockade. As a proof of principle, we demonstrate electronic tunneling spectroscopy of point defects in hBN and the molecular qubit vanadyl phthalocyanine (VOPc). Our approach demonstrates a new pathway for the incorporation of molecules and atomic defects into solid-state quantum devices and circuits along with a readout scheme that does not rely on highly-constrained optical processes for photonic readout.