本文报道了基于异质结构自旋量子比特器件与工业CMOS技术的兼容性。研究展示了利用英飞凌200毫米生产线在有限热预算下制造的Si/Si-Ge量子点器件，这些器件表现出最先进的电荷感应、电荷噪声及谷分裂特性，证明了工业化制备并未损害异质结构的质量。这些测量参数均与自旋量子比特相干性和量子比特门保真度相关联。我们描述了单电子器件布局、设计及其采用电子束光刻的制备工艺，并介绍了标准的90纳米后端布线流程，该流程可扩展至多层布线以实现可扩展的量子计算架构。此外，我们还展示了毫开尔文级别的表征结果。我们的工作展示了尽管受到热预算限制，工业化制备方法仍能充分利用Si/Si-Ge材料系统的固有CMOS兼容性，为具有高产量和高质量的先进量子处理器架构铺平了道路。

This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal budget. The devices exhibit state-of-the-art charge sensing, charge noise and valley splitting characteristics, showing that industrial fabrication is not harming the heterostructure quality. These measured parameters are all correlated to spin qubit coherence and qubit gate fidelity. We describe the single electron device layout, design and its fabrication process using electron beam lithography. The incorporated standard 90 nm back-end of line flow for gate-layer independent contacting and wiring can be scaled up to multiple wiring layers for scalable quantum computing architectures. In addition, we present millikelvin characterization results. Our work exemplifies the potential of industrial fabrication methods to harness the inherent CMOS-compatibility of the Si/Si-Ge material system, despite being restricted to a reduced thermal budget. It paves the way for advanced quantum processor architectures with high yield and device quality.