扭曲双层石墨烯（TBG）在所谓的魔角（$\sim 1.1^\circ$）附近表现出平坦电子能带，导致强电子关联以及超导性和相关绝缘态等新兴量子相的出现。然而，超出魔角范围后，能带结构通常仍保持色散特性，从而削弱了由相互作用驱动的现象。在这项工作中，我们通过系统分析垂直压力下层间耦合修饰的作用，探索了大角度TBG中压力诱导平带与魔角平带之间的等价性。结果显示，压力诱导的平带表现出类似于魔角TBG的空间局域化特性，电荷密度集中在AA堆叠区域。此外，在外加磁场下的霍尔电导率和磁输运特性表明，这些压力诱导的平带与魔角TBG的量子霍尔响应具有相似的关键特征。获得的霍夫施塔特谱显示，在压力下所有扭转角下均存在四个一致的低能隙，这与计算得到的霍尔电导平台相吻合。我们的研究结果表明，压力为在TBG中设计平坦电子能带和关联态提供了一种替代途径，扩展了可调莫尔超晶格材料的研究范围，突破了魔角的限制。

Twisted bilayer graphene (TBG) exhibits flat electronic bands at the so-called magic angle ($\sim 1.1^\circ$), leading to strong electron correlations and emergent quantum phases such as superconductivity and correlated insulating states. However, beyond the magic angle, the band structure generally remains dispersive, diminishing interaction-driven phenomena. In this work, we explore the equivalence between pressure-induced flatbands and the magic-angle flatband in large-angle TBG by systematically analyzing the role of interlayer coupling modifications under perpendicular pressure. We show that pressure-induced flatbands exhibit spatial localization similar to magic-angle TBG, with charge density concentrated in the AA-stacked regions. Furthermore, the Hall conductivity and magneto-transport properties under an external magnetic field reveal that these pressure-induced flatbands share key signatures with the quantum Hall response of magic-angle TBG. The obtained Hofstadter spectrum shows four consistent low-energy gaps across all twist angles under pressure, which align with the calculated Hall conductivity plateaus. Our findings suggest that pressure offers an alternative pathway to engineer flat electronic bands and correlated states in TBG, extending the landscape of tunable moir\'e materials beyond the constraints of the magic angle.