基于LSTM网络的量子电路保真度提升:Q-fid

Q-fid: Quantum Circuit Fidelity Improvement with LSTM Networks

摘要 Abstract

量子电路(QC)的保真度受硬件特性、校准状态以及编译过程等多种因素的影响,这些因素共同决定了其对噪声的敏感程度。然而,由于错误率波动以及缺乏标准化的保真度度量,现有方法难以准确估计和比较不同电路布局的噪声性能。本文提出了一种基于长短期记忆网络(LSTM)的保真度预测系统Q-fid,并设计了一种新的度量方法,用于量化量子电路的保真度。Q-fid能够直观地预测噪声中间规模量子(NISQ)电路的噪声性能,将保真度预测问题转化为时间序列预测问题,通过分析令牌化后的电路捕获门序列之间的因果依赖关系及其对整体保真度的影响。此外,该模型能够动态适应硬件特性的变化,在不同条件下提供准确的保真度预测。Q-fid的平均均方根误差(RMSE)为0.0515,比Qiskit工具mapomatic的预测精度高出24.7倍。通过提供可靠的方法进行保真度预测,Q-fid助力开发者优化编译策略,实现更高效且抗噪能力强的量子电路实现。

The fidelity of quantum circuits (QC) is influenced by several factors, including hardware characteristics, calibration status, and the transpilation process, all of which impact their susceptibility to noise. However, existing methods struggle to estimate and compare the noise performance of different circuit layouts due to fluctuating error rates and the absence of a standardized fidelity metric. In this work, Q-fid is introduced, a Long Short-Term Memory (LSTM) based fidelity prediction system accompanied by a novel metric designed to quantify the fidelity of quantum circuits. Q-fid provides an intuitive way to predict the noise performance of Noisy Intermediate-Scale Quantum (NISQ) circuits. This approach frames fidelity prediction as a Time Series Forecasting problem to analyze the tokenized circuits, capturing the causal dependence of the gate sequences and their impact on overall fidelity. Additionally, the model is capable of dynamically adapting to changes in hardware characteristics, ensuring accurate fidelity predictions under varying conditions. Q-fid achieves a high prediction accuracy with an average RMSE of 0.0515, up to 24.7x more accurate than the Qiskit transpile tool mapomatic. By offering a reliable method for fidelity prediction, Q-fid empowers developers to optimize transpilation strategies, leading to more efficient and noise-resilient quantum circuit implementations.

基于LSTM网络的量子电路保真度提升:Q-fid - arXiv