冷却计算——无论是经典还是量子形式，都因缺乏合适的低温存储器而受到严重限制。在能量效率和速度方面的问题已知数十年，但迄今为止，传统技术无法提供足够的性能。本文提出了一种新型非易失性存储设备，该设备结合了超导纳米线和基于层状二硫属化物材料电荷有序态切换的全电子电荷构型忆阻器（CCM）。我们研究了使用NbTiN纳米线和1T-TaS2 CCM制造的此类器件的时间动态和电流-电压特性。通过建模超导序参量对器件的动态响应进行忠实再现，展示了其应用的多功能性。该器件固有的超高能效和速度与单通量量子逻辑兼容，为低温计算和量子计算外围设备提供了有前景的新存储概念。

Cryo-computing - both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenge both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a novel non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We investigate the time-dynamics and current-voltage characteristics of such a device fabricated using a NbTiN nanowire and a 1T-TaS2 CCM. The observed dynamical response of the device is faithfully reproduced by modelling of the superconducting order parameter showing versatility of application. The inherent ultrahigh energy efficiency and speed of the device, which is compatible with single flux quantum logic, leads to a promising new memory concept for use in cryo-computing and quantum computing peripheral devices.