硫属化合物钙钛矿已成为下一代光电子应用的有前景材料类别，而BaZrS$_\text{3}$ 因其宽禁带、地壳元素丰富的组成以及热化学稳定性引起了广泛关注。然而，无论采用何种合成方法，以往的研究均报告了微弱且模糊的光致发光（PL），这引发了对其固有光电子质量的质疑。在本研究中，我们展示了高质量BaZrS$_\text{3}$ 单晶在室温下的强带间主导PL。尽管PL发射谱带狭窄且单一，但时间分辨PL测量表明载流子寿命为$1.0\pm0.2$ ns。为了理解强PL和短载流子寿命的起源，我们结合多波长激发和偏振依赖性拉曼光谱测量，并辅以第一性原理晶格动力学计算。我们识别出全部23种理论上预测的拉曼活性模式及其对称性，为未来研究提供了全面参考。结果表明，声子辅助载流子衰减和强烈的电子-声子耦合导致了短载流子寿命，这由拉曼光谱和DFT计算所证实。进一步研究成分变化或部分阳离子/阴离子取代可能缓解电子-声子耦合并提高载流子寿命。通过建立BaZrS$_\text{3}$ 固有振动和光电子性质的详细参考，本研究为硫属化合物钙钛矿在能源和光电子技术中的进一步发展铺平了道路。

Chalcogenide perovskites have emerged as a promising class of materials for the next generation of optoelectronic applications, with BaZrS$_\text{3}$ attracting significant attention due to its wide bandgap, earth-abundant composition, and thermal and chemical stability. However, previous studies have consistently reported weak and ambiguous photoluminescence (PL), regardless of synthesis method, raising questions about the intrinsic optoelectronic quality of this compound. In this work, we demonstrate strong, band-to-band-dominated PL at room temperature in high-quality BaZrS$_\text{3}$ single crystals. Despite the narrow, single-component PL emission band, time-resolved PL measurements reveal a carrier lifetime of $1.0\pm0.2$ ns. To understand the origin of the strong PL and short carrier lifetime, we perform multiwavelength excitation and polarization-dependent Raman measurements, supported by first-principles lattice dynamics calculations. We identify all 23 theoretically predicted Raman-active modes and their symmetries, providing a comprehensive reference for future studies. Our results indicate that phonon-assisted carrier decay and strong electron-phonon coupling contribute to the short carrier lifetimes, as evidenced by Raman spectroscopy and DFT calculations. Further studies on compositional variations or partial cation/anion substitutions could mitigate electron-phonon coupling and enhance carrier lifetimes. By establishing a detailed reference for the intrinsic vibrational and optoelectronic properties of BaZrS$_\text{3}$, this work paves the way for further advancements in chalcogenide perovskites for energy and optoelectronic technologies.