单栅极多晶硅CMOS技术中的温度鲁棒模拟神经形态芯片
Temperature-Resilient Analog Neuromorphic Chip in Single-Polysilicon CMOS Technology
摘要 Abstract
在模拟神经形态芯片中,设计者可以通过嵌入器件和电路固有物理特性的计算原语,大幅减少器件数量和能耗,并实现高并行性,因为所有器件同时进行计算。神经网络参数可以存储在本地模拟非易失性存储器(NVMs)中,从而节省在存储器和逻辑之间移动数据所需的能量。然而,模拟亚阈值电子电路的主要缺点是其显著的温度敏感性。本文展示了一种温度补偿机制,可以解决此问题。我们设计并制造了一款芯片,该芯片实现了两层模拟神经网络,通过低成本单栅极互补金属氧化物半导体(CMOS)工艺训练,用于对手写数字低分辨率图像进行分类,并使用非常规模拟NVMs存储权重。我们展示了在10℃至60℃范围内运行的温度鲁棒型模拟神经形态芯片,用于图像识别,分类精度无损失,在整个温度范围内与相应的基于软件的神经网络相比,误差不超过2%。
In analog neuromorphic chips, designers can embed computing primitives in the intrinsic physical properties of devices and circuits, heavily reducing device count and energy consumption, and enabling high parallelism, because all devices are computing simultaneously. Neural network parameters can be stored in local analog non-volatile memories (NVMs), saving the energy required to move data between memory and logic. However, the main drawback of analog sub-threshold electronic circuits is their dramatic temperature sensitivity. In this paper, we demonstrate that a temperature compensation mechanism can be devised to solve this problem. We have designed and fabricated a chip implementing a two-layer analog neural network trained to classify low-resolution images of handwritten digits with a low-cost single-poly complementary metal-oxide-semiconductor (CMOS) process, using unconventional analog NVMs for weight storage. We demonstrate a temperature-resilient analog neuromorphic chip for image recognition operating between 10$^{\circ}$C and 60$^{\circ}$C without loss of classification accuracy, within 2\% of the corresponding software-based neural network in the whole temperature range.