近年来，已有多种技术被报道用于在剥离的六方氮化硼（hBN）中生成光学活性缺陷，这些缺陷对量子光子器件具有变革潜力。然而，在可扩展的hBN薄膜中实现所需缺陷类型的按需生成仍然是一个重大挑战。在此，我们证明了悬浮态、大面积化学气相沉积（CVD）生长的hBN中负硼空位缺陷VB-的形成强烈依赖于轰击粒子（离子、中子和电子）的类型和辐照条件。与悬浮态hBN相比，由于基底产生不可控的次级粒子以及结果对hBN厚度的强依赖性，基底支撑的hBN中的缺陷形成更为复杂。我们通过结合光谱特性和光学检测磁共振特征来识别不同的缺陷类型，区分由轻离子和中子形成的硼空位与其他发射波长为650 nm的光学活性缺陷（归因于反位氮空位NBVN），并揭示了影响自旋晶格弛豫时间（T1）和零场分裂参数的额外暗态顺磁性缺陷的存在，这些特性均强烈依赖于缺陷密度。这些结果突显了在大规模CVD生长hBN中进行精确缺陷工程的潜力，为可扩展的量子光子器件制造铺平了道路。

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, we demonstrate that formation of negative boron vacancy defects, VB-, in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. We identify different defect types by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (NBVN) and reveal the presence of additional dark paramagnetic defects that influence spin-lattice relaxation time (T1) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.