本文展示了利用机器学习实现自动技术计算机辅助设计（TCAD）参数校准的可能性，并通过实验数据进行了验证。该机器仅需通过TCAD数据进行训练。采用新兴超宽带隙材料氮化镓（Ga$_2$O$_3$）制造的肖特基势垒二极管（SBD）被测量，其电流-电压（IV）特性用于提取Ga$_2$O$_3$ Philips统一迁移率（PhuMob）模型参数、有效阳极功函数以及环境温度（共计7个参数）。研究中采用了一种包含自动编码器（AE）和神经网络（NN）的组合模型（AE-NN）。从噪声较大的实验曲线中提取了Ga$_2$O$_3$ PhuMob参数，基于提取的参数进行的TCAD仿真显示，这些参数在预开启状态下与专家校准结果相当，但在开启状态时则不然。通过引入简单的物理信息神经网络（PINN）（AE-PINN），该机器在所有工作状态下均表现出与人类专家相当的性能。

In this paper, we demonstrate the possibility of performing automatic Technology Computer-Aided-Design (TCAD) parameter calibration using machine learning, verified with experimental data. The machine only needs to be trained by TCAD data. Schottky Barrier Diode (SBD) fabricated with emerging ultra-wide-bandgap material, Gallium Oxide (Ga$_2$O$_3$), is measured and its current-voltage (IV) is used for Ga$_2$O$_3$ Philips Unified Mobility (PhuMob) model parameters, effective anode workfunction, and ambient temperature extraction (7 parameters). A machine comprised of an autoencoder (AE) and a neural network (NN) (AE-NN) is used. Ga$_2$O$_3$ PhuMob parameters are extracted from the noisy experimental curves. TCAD simulation with the extracted parameters shows that the quality of the parameters is as good as an expert's calibration at the pre-turned-on regime but not in the on-state regime. By using a simple physics-informed neural network (PINN) (AE-PINN), the machine performs as well as the human expert in all regimes.